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2N1131A - PNP SILICON ANNULAR TRANSISTORS

Download the 2N1131A datasheet PDF. This datasheet also covers the 2N1131 variant, as both devices belong to the same pnp silicon annular transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N1131-Motorola.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N1131 PNP SILICON ANNULAR TRANSISTORS
2N1132 SWITCHING TRANSISTOR
2N1132A SWITCHING TRANSISTOR
2N1100 PNP germanium power transistors
2N1120 PNP germanium power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N 1131 (SILl.CON) 2N1131JAN AVAILABLE 2Nl131A 2N1991 PNP SILICON ANNULAR TRANSISTORS · .. designed for medium-speed switching and amplifier applications where low DC current gain is essential. • Low DC Current Gain - hFE =45 (Max) @ IC = 150 mAdc - 2N1131,A • Turn-On Time - ton = 45 ns (Max) - 2N 1131A • Turn-Off Time - toff = 35 ns (Max) - 2N1131A *MAXIMUM RATINGS Rating Symbol Cpllector·Emitter Voltage Collector·Emitter Voltage Collector·Ba•• Voltage Emitter·Base Voltage Collector Current - Continuous Total Device Dissipation@TA==2SoC Derate above 250 e Total Device Dissipation@Te= 250 e @TC=I000C Derate above 25°C VeEO VeER VeB VEB Ie Po Po Operating Junction Temperature Range Storage Temperature Range TJ T.tg 2N1131 2N1131A 2N1991 35 40 20 50 50 - 50 60 30 5.0 5.