Microsemi 2N1890
NPN LOW POWER SILICON TRANSISTOR
| Part No. | 2N1890 |
|---|---|
| Datasheet | 2N1890 Download |
| Manufacturer |  Microsemi |
| Description | NPN LOW POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Impedance 1) Derate linearly 4.57 mW/0C for TA > 250C 2) Derate linearly 17.2 mW/0C for TC > 250C Symbol VCBO VEBO IC PT TJ, Tstg Symbol ZθJX 2N1711 2N1890 75 100 7.0 500 0.8 3.0 -65 to +200 Max. 58ELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 100 µAdc 2N1711, S 2N1890, S V(BR)CBO Collector-Emitter Breakdown Voltage RBE = 10 Ω, IC = 100 mAdc 2N1711, S 2N1890, S V(BR)CER Collector-Emitter Breakdown Voltage IC = 30 mAdc 2N1711, S 2N1890, S V(BR)CEO Emitter-Base Breakdown Voltage IE = 100 µAdc C