VPT 2N1890
NPN Low Power Silicon Transistor
| Part No. | 2N1890 |
|---|---|
| Datasheet | 2N1890 Download |
| Manufacturer |  VPT |
| Description | NPN Low Power Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Available in JAN, JANTX and JANTXV per MIL-PRF-19500/225● TO-5 and TO-39 Packages
● General Purpose Transistors for Low Power
APPLICATIONS
● Ideal for High Performance Low Noise Amplifiers, Oscillators and Switching CircuitsELECTRICAL CHARACTERISTICS
(25oC unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Test Conditions IC = 30 mA dc 2N1711, 2N1711S 2N1890, 2N1890S Symbol Units Min. V(BR)CEO V dc 30 60 Collector - Emitter Breakdown Voltage IC = 100 mA dc, RBE = 10 Ω 2N1711, 2N1711S 2N1890, 2N1890S V(BR)CER V dc 50 80 Max. — — Collector - Base Cutoff Current Emitter - Base Cutoff Current Collector - Base Cutoff Current Emitter - Base Cutoff Current Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCB = 60 V dc 2N1711, 2N1711S ICBO1 nA dc — 10 VCB = 80 V dc 2N1890, 2N1890S 10 VEB = 5 Vdc IEBO1 nA dc — 5.0 VCB = 75 V dc 2N1711, 2N1711S VCB = 100 V dc 2N1890, 2N1...
