2N1893S Datasheet | Microsemi

TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/182 Devices 2N720A 2N1893 2N1893S Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol All Devices Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage (RBE = 10 Ω) Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) VCEO VCBO VEBO VCER 80 120 7.0 100 500 2N720A 2N1893, S 0.5 0.8 1.8 3.0 Operating & Storage Junction Temperature Range TJ, Tsrg -65 to +200 THERMAL CHARACTERISTICS Characteristics Symbol 2N720A 2N1893, S Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 2.86 m W/0C for 2N720A, 4.57 m W/0C for 2N1893, S TA > 250C 2) Derate linearly 10.3 m W/0C for 2N720A, 17.2 m W/0C for 2N1893, S TC > 250C ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 30 m Adc V(BR)CEO Collector-Emitter...