Microsemi 2N2150
NPN POWER SILICON TRANSISTOR
| Part No. | 2N2150 |
|---|---|
| Datasheet | 2N2150 Download |
| Manufacturer |  Microsemi |
| Description | NPN POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
(TC = 250C unless otherwise noted) Ratings Symbol Value Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ Tc = +1000C(1) Operating & Storage Junction Temperature Range VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RθJC 100 150 8.0 2.0 2.0 30 -65 to +200 Max. 3.3 Units Vdc Vdc Vdc Adc Adc W 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly @ 0.3 W/0C for TC > +1000C 0 Unit C/W TO-111* *See Appendix A for Package OutlineELECTRICAL CHARACTERISTICS
(TC = +250C) Characteristics Symbol V(BR)CEO VCBO ICEO ICBO ICEX IEBO ICES Min. 100 150 10 5.0 5.0 2.0 5.0 Max. Unit Vdc Vdc µAdc µAdc µAdc µAdc µAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 50 mAdc Collector-Emitter Breakdown Voltage IC = 100 µAdc Collector-Emitter Cutoff Current VCE = 80 Vdc Collector-Base Cutoff Current VCB = 120 Vdc Collector-Emitter Cutoff Current VCE = 120 Vdc, VBE =...