Microsemi 2N2151
This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications.| Part No. | 2N2151 |
|---|---|
| Datasheet | 2N2151 Download |
| Manufacturer |  Microsemi |
| Description | NPN Power Transistors |
| Buy | Stock & Price |
APPLICATIONS
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● Fast Switching High Frequency Switching and Amplifying
FEATURES
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● High Reliability Greater Gain Stability 5 Amp, 100V, Planar, NPN Power Transistors JAN, JANTX
DESCRIPTION
: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200° C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. TO-59ABSOLUTE MAXIMUM RATINGS
SYMBOL VCBO* VCEO* VEBO* IC * IC * IB * T STG* T J* * PT * θ CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Collector Current Continuous Collector Current Continuous Base Current Storage Temperature Operating Junction Temperature Lead Temperature 1/16" From Case for 10 Sec. Power Dissipation T A = 25° C T C = 100° C Thermal Resistance Junction to Case VALUE 150 100 8 10 5 2 -65 to 200 -65 to 200 230 UNITS V V V A A A °C °C °C 2 30 3.33 W W ° C/W JC * Indicates JEDEC registered data.
