Microsemi 2N2605
PNP SILICON LOW POWER TRANSISTOR
| Part No. | 2N2605 |
|---|---|
| Datasheet | 2N2605 Download |
| Manufacturer |  Microsemi |
| Description | PNP SILICON LOW POWER TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCBO VCEO VEBO IC PT TJ, Tstg Symbol RθJC 2N2604 80 2N2605 70 Units Vdc Vdc Vdc mAdc mW/0C 0 C Unit C/mW @ TA = +250C(1) Operating & Storage Junction Temperature Range 60 6.0 30 400 -65 to +200 Max. 0.437 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.28 mW/0C above TA = +250C 0 TO-46* (TO-206AB) *See appendix A for package outlineELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 10 µAdc Collector-Emitter Breakdown Voltage IC = 10 mAdc Emitter-Base Breakdown Current IE = 10 µAdc Collector-Base Cutoff Current VCB = 50 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 50 Vdc 2N2604 2N2605 V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES 80 70 60 6.0 10 2.0 10 Vdc...