Microsemi 2N3720
This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications.| Part No. | 2N3720 |
|---|---|
| Datasheet | 2N3720 Download |
| Manufacturer |  Microsemi |
| Description | Silicon PNP Power Transistors |
| Buy | Stock & Price |
APPLICATIONS
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● 2N3720
● High-Speed Switching Medium-Current Switching High-Frequency Amplifiers
FEATURES
:● Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60 Vdc (Min) - 2N3720 DC Current Gain: hFE = 25-180 @ IC = 1.0 Adc Low Collector-Emitter Saturation Voltage: VCE(sat) = 0.75 Vdc @ IC = 1.0 Adc High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ)
● Silicon PNP Power Transistors
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DESCRIPTION
: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200° C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. TO-5 VALUE 60 60 4.0 10 3.0 0.5 -65 to 200 -65 to 200 6.0 34.3 1.0 5.71 29 175 ABSOLUTE MAXIMUMMAXIMUM RATINGS
: SYMBOL VCEO* VCB* VEB* IC* IC* IB* T STG* T J* PD* PD* θ CHARACTERISTIC Collector-E...
