Microsemi 2N3737
NPN SILICON SWITCHING TRANSISTOR
| Part No. | 2N3737 |
|---|---|
| Datasheet | 2N3737 Download |
| Manufacturer |  Microsemi |
| Description | NPN SILICON SWITCHING TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Min. Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C Total Power Dissipation @ TC = +25°C 2N3735, 2N3735L 2N3737 2N3737UB 2N3735, 2N3735L 2N3737 2N3737UB VCEO VCBO VEBO IC PT PT 40 Vdc 75 Vdc 5 Vdc 1.5 Adc 1.0 (1) W 0.5 (3) W 0.5 (5) W 2.9 (2) W 1.9 (4) W N/A W Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C * Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices. (1) Derate linearly at 5.71 mW/°C above TA = +25°C (2) Derate linearly at 16.6 mW/°C above TA = +25°C (3) Derate linearly at 2.86 mW/°C above TA = +25°C (4) Derate linearly at 11.3 mW/°C above TA = +25°C (5) Derate linearly at 3.07 mW/°C above TA = +25°C (6) TA = +55°C for UB on printed circuit board (PCB). PCB = FR4 .0625 inch (1.59MM) 1 – layer 1 oz Cu, horizontal, still air, pads (UB) = .034 inch (0.86 mm) x .048 inch (1.2 mm), RθJA with a defined thermal resistance condition included is measured at PT = 500mW.
