2N3737 Overview
Semicoa Semiconductors offers: or (714) 979-1900 Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Power Dissipation, TC = 25°C Derate linearly above 25°C Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT RθJA TJ TSTG 2N3737 Silicon NPN Transistor Data Sheet...
2N3737 Key Features
- Hermetically sealed TO-46 metal can
- Also available in chip configuration
- Chip geometry 0806
- Reference document
- Qualification Levels: JAN, JANTX, JANTXV and JANS
- Radiation testing available
- 65 to +200
- mon Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance
