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2N3737 Datasheet Silicon NPN Transistor

Manufacturer: Semicoa Semiconductor

Overview: Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N3737J) • JANTX level (2N3737JX) • JANTXV level (2N3737JV) • JANS level (2N3737JS) •.

Datasheet Details

Part number 2N3737
Manufacturer Semicoa Semiconductor
File Size 206.50 KB
Description Silicon NPN Transistor
Datasheet 2N3737_SemicoaSemiconductor.pdf

General Description

Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N3737J) • JANTX level (2N3737JX) • JANTXV level (2N3737JV) • JANS level (2N3737JS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Power Dissipation, TC = 25°C Derate linearly above 25°C Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT RθJA TJ TSTG 2N3737 Silicon NPN Transistor Data Sheet Applications • General purpose • Low power • NPN silicon transistor

Key Features

  • Hermetically sealed TO-46 metal can.
  • Also available in chip configuration.
  • Chip geometry 0806.
  • Reference document: MIL-PRF-19500/395 Benefits.
  • Qualification Levels: JAN, JANTX, JANTXV and JANS.
  • Radiation testing available TC = 25°C unless otherwise specified Rating Unit 40 Volts 75 Volts 5 Volts 1.5 A 0.5 W 2.86 mW/°C 1.9 W 11.3 mW/°C 350 °C/W -65 to +200 °C Copyright 2002 Rev. G Semicoa Semiconductors, Inc. 333 McCormick Aven.

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