Microsemi 2N3846
NPN POWER SILICON TRANSISTOR
| Part No. | 2N3846 |
|---|---|
| Datasheet | 2N3846 Download |
| Manufacturer |  Microsemi |
| Description | NPN POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC 2N3846 200 300 2N3847 300 400 Units Vdc Vdc Vdc Adc W W 0 C Unit C/W 10 20 @ TA = +250C (1) DataSheet4U.com 4.0 PT @ TC = +1000C (2) 150 Operating & Storage Temperature Range -65 to +200 Top, Tstg DataShee THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 26.6 mW/0C to +1750C 2) Derate linearly 2 W/0C to +1750C Symbol RθJC Max. 0.5 TO-63* 0 *See Appendix A for Package OutlineELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc; IB = 0 Collector-Emitter Cutoff Current VCE = 300 Vdc; VBE = 0 VCE = 400 Vdc; VBE = 0 Collector-Emitter Cutoff Current VCE = 200 Vdc; IB = 0 VCE = 300 Vdc; IB = 0 Emitter-Base Cutoff Current VBE = 10 Vdc; IC = 0 2N3846 2N3847 2N3846 2N3847 2N3846 2N3847 V(BR)CEO 200 300 2 2 5 5...