Microsemi 2N4150
NPN POWER SILICON TRANSISTOR
| Part No. | 2N4150 |
|---|---|
| Datasheet | 2N4150 Download |
| Manufacturer |  Microsemi |
| Description | NPN POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Junction Temp. Range 2N4150 2N5237 2N5238 Symbol 2N4150S 2N5237S 2N5238S Unit VCEO VCBO VEBO IC PT TJ, Tstg Symbol RθJC RθJA 70 100 120 150 10 10 1.0 5.0 -65 to +200 Max. 0.020 0 170 200 Vdc Vdc Vdc Adc W 0 TO- 5* 2N4150, 2N5237, 2N5238 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Junction-to-Ambient 1) Unit C/mW 0.175 2) Derate linearly @ 5.7 mW/0C for TA > +250C Derate linearly @ 50 mW/0C for TC > +250C TO-39* (TO-205AD) 2N4150S, 2N5237S, 2N5238S *See appendix A for package outlineELECTRICAL CHARACTERISTICS
(TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Emitter-Base Breakdown Voltage IE = 10 µAdc Collector-Emitter Breakdown Voltage IC = 0.1 Adc V(BR)EBO 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S 2N4150, 2N4150S 2N...
