Microsemi 2N5152
NPN POWER SILICON TRANSISTOR
2N5152 Specifications
- Package : TO-39
- Mount Type : Through Hole
- Polarity : NPN
- Max Collector Current : 2A
- Collector Base Voltage : 100V
- Collector Emitter Voltage : 80V
- Emitter Base Voltage : 5.5V
- Max Power Dissipation : 1W
- Max Operating Temp : 200°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | 2N5152 |
|---|---|
| Datasheet | 2N5152 Download |
| Manufacturer |  Microsemi |
| Description | NPN POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2) VCEO VCBO VEBO IC(3, 4) PT Operating & Storage Temperature Range Tj, Tstg THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case 1) Derate linearly 5.7 mW/0C for TA > +250C 2) Derate linearly 66.7 mW/0C for TC > +250C 3) Derate linearly 80 mW/0C for TC > +250C 4) This value applies for PW ≤ 8.3 ms, duty cycle ≤ 1% RθJC All Units 80 100 5.5 2.0 1.0 11.8 -65 to +200 Max. 15 Units Vdc Vdc Vdc Adc W W °C Unit 0C/WELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol Min. OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc, IB = 0 Emitter-Base Cutoff Current V(BR)CE