2N5152 Description
15 Units Vdc Vdc Vdc Adc W W °C Unit 0C/W (TA = 250C unless otherwise noted) Characteristics Symbol Min. OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc, IB = 0 Emitter-Base Cutoff Current V(BR)CE.
2N5152 is NPN POWER SILICON TRANSISTOR manufactured by Microsemi.
| Manufacturer | Part Number | Description |
|---|---|---|
| 2N5152 | NPN Transistor | |
VPT Components |
2N5152 | NPN Power Silicon Transistor |
Seme LAB |
2N5152 | NPN transistors |
MACOM Technology Solutions |
2N5152 | NPN Power Silicon Transistor |
| 2N5152L | NPN Transistor |
15 Units Vdc Vdc Vdc Adc W W °C Unit 0C/W (TA = 250C unless otherwise noted) Characteristics Symbol Min. OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc, IB = 0 Emitter-Base Cutoff Current V(BR)CE.