2N5152 Datasheet | Semicoa Semiconductor

Features : - - - - Silicon power transistor for use in high speed switching applications. Housed in a TO-39 case. Also available in chip form using the 9201 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/544 which Semicoa meets in all cases. Generic Part Number: 2N5152 REF: MIL-PRF-19500/544 TO-39 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Collector Current, PW < 8.3 ms, < 1% duty cycle Reverse Pulse Energy Power Disipation TA = 25o C ambient o Derate above 25 C Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC IC Rating 80 100 5.5 2 10 15 Unit V V V A A m J Watt o m W/ C o PT TJ TSTG 1.0 5.7 -65 to +200 -65 to +200 C C o Data Sheet No. 2N5152 Electrical Characteristics TC = 25o C unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 100 m A, IB = 0, pulsed Base-Emitter Cutoff Current VEB = 4 V, IC = 0 VEB = 5.5 V, IC = 0 Collector-Emitter Cutoff Current VCE = 60 V, VBE = 0 VCE = 100 V, VBE = 0 VCE = 40 V, IB = 0 VCE = 60 V, VBE = -2 V, TC = 150 C o Symbol V(BR)CBO IEBO1 IEBO2 ICES1 ICES2 ICEO ICEX Min 80 ------------- Max --1.0 1.0 1.0 1.0 50 500 Unit V µA m A µA m A µA µA ON Characteristics Forward Current Transfer Ratio IC = 50 m A, VCE = 5 V IC = 2.5 A, VCE = 5 V, pulsed IC = 5.0 A, VCE = 5 V, pulsed IC = 2.55 A, VCE = 5 V pulsed, TC = -55o C Base-Emitter Voltage, Nonsaturted VCE = 5 V, IC = 2.5 A, pulsed Base-Emitter Saturation Voltage IC = 2.5 A, IB = 250 m A, pulsed IC = 5 A, IB = 500 m A, pulsed Collector-Emitter Saturation Voltage IC = 2.5 A, IB = 250 m A, pulsed IC = 5 A, IB = 500 m A, pulsed Symbol h FE1 h FE2 h FE3 h FE4 VBE VBE(sat)1 VBE(sat)2 VCE(sat)1 VCE(sat)2 Min 20 30 20 15 ----------- Max --90 ----1.45 1.45 2.2 0.75...