Microsemi 2N5339U3
NPN POWER SILICON SWITCHING TRANSISTOR
| Part No. | 2N5339U3 |
|---|---|
| Datasheet | 2N5339U3 Download |
| Manufacturer |  Microsemi |
| Description | NPN POWER SILICON SWITCHING TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +25°C (1) @ TC = +25°C (2) @ TC = +25°C (3) – U3 Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to Air 1) Derate linearly 5.71mW/°C for TA > 25°C 2) Derate linearly 100mW/°C for TC > 25°C 3) Derate linearly 434mW/°C for TC > 25°C – U3 Symbol VCEO VCBO VEBO IB IC PT Top , Tstg RθJA Value 100 100 6.0 1.0 5.0 1.0 17.5 75 -65 to +200 175ELECTRICAL CHARACTERISTICS
(TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 50mAdc Collector-Emitter Cutoff Current VCE = 100Vdc Collector-Emitter Cutoff Current VCE = 90Vdc, VBE = 1.5Vdc Symbol Min. Max. V(BR)CEO 100 ICEO 100 ICEX 1.0 Collector-Base Cutoff Current VCB = 100Vdc ICBO 1.0 Emitter-Base Cutoff Current VEB = 6.0Vdc IEBO 100 Unit Vdc Vdc Vdc Adc Adc W °C °C/W Unit Vdc µAdc µAdc µAdc µAdc TO-39 (TO-205AD) U-3 (TO-276AA) T4-LDS-0011 Rev.