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2N5339U3
NPN Power Silicon Transistor
Features
• JAN, JANTX, JANTXV, JANS and JANSR Qualified to MIL-PRF-19500/560 • Radiation Tolerant Levels M, D, P, L and R • Lightweight & Low Power • Ideal for Space, Military and Other High Reliability Applications • Surface Mount U3 Package
Rev. V3
Electrical Characteristics (TA = 25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min.
Max.
Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Base Cutoff Current Emitter - Base Cutoff Current
IC = 50 mA dc
V(BR)CEO V dc
100
—
VCE = 100 V dc VCE = 90 V dc, VBE = 1.5 V dc
ICEO ICEX1
µA dc
—
100 1.0
VCB = 100 Vdc
ICBO µA dc
—
1.0
VEB = 6.