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2N5339U3 - NPN Power Silicon Transistor

Download the 2N5339U3 datasheet PDF. This datasheet also covers the 2N5339U3-MA variant, as both devices belong to the same npn power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • JANS and JANSR Qualified to MIL-PRF-19500/560.
  • JEDEC Registered 2N5154.
  • Lightweight & Low Power.
  • Ideal for Space, Military, and Other High Reliability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N5339U3-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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2N5339 NPN POWER SILICON SWITCHING TRANSISTOR Microsemi Corporation
2N5339 HIGH SPEED NPN TRANSISTOR SSDI

Other Datasheets by MACOM Technology Solutions

Part Number Description
2N5339 NPN Power Silicon Transistor
2N5151 NPN Power Silicon Transistor
2N5151L NPN Power Silicon Transistor
2N5152 NPN Power Silicon Transistor
2N5152L NPN Power Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5339U3 NPN Power Silicon Transistor Features  JANS and JANSR Qualified to MIL-PRF-19500/560  JEDEC Registered 2N5154  Lightweight & Low Power  Ideal for Space, Military, and Other High Reliability Applications  Surface Mount U3 Package Rev. V1 Electrical Characteristics Parameter Test Conditions Symbol Units Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current IC = 50 mAdc VCE = 100 Vdc VCE = 90 Vdc, VBE = 1.5 Vdc V(BR)CEO Vdc ICEO ICEX µAdc Collector - Base Cutoff Current VCB = 100 Vdc ICBO µAdc Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Emitter - Base Saturation Voltage Dynamic Characteristics VEB = 6.0 Vdc IC = 0.5 Adc, VCE = 2.0 Vdc IC = 2.