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2N5339 - NPN Power Silicon Transistor

Download the 2N5339 datasheet PDF. This datasheet also covers the 2N5339-MA variant, as both devices belong to the same npn power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • JAN, JANTX, JANTXV, JANS, and JANSR 100K rads (si) per MIL-PRF-19500/560.
  • TO-39 (TO-205AD) Package Rev. V1 Electrical Characteristics Parameter Test Conditions Symbol Units Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Base Cutoff Current IC = 50 mAdc VCE = 100 Vdc VCE = 90 Vdc, VBE = 1.5 Vdc VCB = 100 Vdc V(BR)CEO Vdc ICEO ICEX µAdc ICBO µAdc Emitter - Base Cutoff Current On Characteristics1 Forward Current Trans.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N5339-MA-COM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5339 NPN Power Silicon Transistor Features  JAN, JANTX, JANTXV, JANS, and JANSR 100K rads (si) per MIL-PRF-19500/560  TO-39 (TO-205AD) Package Rev. V1 Electrical Characteristics Parameter Test Conditions Symbol Units Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Base Cutoff Current IC = 50 mAdc VCE = 100 Vdc VCE = 90 Vdc, VBE = 1.5 Vdc VCB = 100 Vdc V(BR)CEO Vdc ICEO ICEX µAdc ICBO µAdc Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Emitter - Base Saturation Voltage Dynamic Characteristics VEB = 6.0 Vdc IC = 0.5 Adc, VCE = 2.0 Vdc IC = 2.0 Adc, VCE = 2.0 Vdc IC = 5.0 Adc, VCE = 2.0 Vdc IC = 2.0 Adc, IB = 0.2 Adc IC = 5.0 Adc, IB = 0.