• Part: 2N5339
  • Description: NPN POWER SILICON TRANSISTOR
  • Category: Transistor
  • Manufacturer: VPT Components
  • Size: 549.86 KB
Download 2N5339 Datasheet PDF
VPT Components
2N5339
2N5339 is NPN POWER SILICON TRANSISTOR manufactured by VPT Components.
NPN POWER SILICON TRANSISTOR Features - JAN, JANTX, JANTXV, JANS, and JANSR 100K rad (si) per MIL-PRF-19500/560 - TO-39 (TO-205AD) Package ELECTRICAL CHARACTERISTICS PARAMETER OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Base Cutoff Current Emitter - Base Cutoff Current ON CHARACTERISTIC1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Emitter - Base Saturation Voltage DYNAMIC CHARACTERISTICS Magnitude of mon Emitter Small Signal Short-Circuit Forward Current Transfer Ratio Output Capacitance TEST CONDITION IC = 50 m A dc VCE = 100 V dc VCE = 90 V dc, VBE = 1.5 V dc VCB = 100 V dc VEB = 6.0 V dc IC= 0.5 A dc, VCE = 2.0 V IC = 2.0 A dc, VCE = 2.0 V IC= 0.5 A dc, VCE = 2.0 V IC= 2.0 A dc, IB = 0.2 A dc IC= 5.0 A dc, IB = 0.5 A dc IC = 150 A dc, IB= 0.2 A dc IC= 150 A dc, IB =0.5 A dc IC= 0.5 A dc, VCE = 10.0 V dc, f = 10 MHz VCB = 10 V, IE = 0, 100 k Hz ≤ f ≤ 1 MHz Input Capacitance SAFE OPERATING AREA DC Tests: TC = + 25 °C, I Cycle, t ≥ 0.5 s Test 1: VCE = 2 V dc, IC = 5 A...