2N5339
2N5339 is NPN POWER SILICON TRANSISTOR manufactured by VPT Components.
NPN POWER SILICON TRANSISTOR
Features
- JAN, JANTX, JANTXV, JANS, and JANSR 100K rad (si) per MIL-PRF-19500/560
- TO-39 (TO-205AD) Package
ELECTRICAL CHARACTERISTICS
PARAMETER OFF CHARACTERISTICS
Collector
- Emitter Breakdown Voltage Collector
- Emitter Cutoff Current Collector
- Base Cutoff Current Emitter
- Base Cutoff Current
ON CHARACTERISTIC1
Forward Current Transfer Ratio
Collector
- Emitter Saturation Voltage
Emitter
- Base Saturation Voltage DYNAMIC CHARACTERISTICS
Magnitude of mon Emitter Small Signal Short-Circuit Forward Current Transfer Ratio
Output Capacitance
TEST CONDITION
IC = 50 m A dc VCE = 100 V dc VCE = 90 V dc, VBE = 1.5 V dc VCB = 100 V dc VEB = 6.0 V dc
IC= 0.5 A dc, VCE = 2.0 V IC = 2.0 A dc, VCE = 2.0 V IC= 0.5 A dc, VCE = 2.0 V IC= 2.0 A dc, IB = 0.2 A dc IC= 5.0 A dc, IB = 0.5 A dc IC = 150 A dc, IB= 0.2 A dc IC= 150 A dc, IB =0.5 A dc
IC= 0.5 A dc, VCE = 10.0 V dc, f = 10 MHz
VCB = 10 V, IE = 0, 100 k Hz ≤ f ≤ 1 MHz
Input Capacitance
SAFE OPERATING AREA
DC Tests:
TC = + 25 °C, I Cycle, t ≥ 0.5 s
Test 1:
VCE = 2 V dc, IC = 5 A...