VPT 2N5339
NPN POWER SILICON TRANSISTOR
| Part No. | 2N5339 |
|---|---|
| Datasheet | 2N5339 Download |
| Manufacturer |  VPT |
| Description | NPN POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● JAN, JANTX, JANTXV, JANS, and JANSR 100K rad (si) per MIL-PRF-19500/560● TO-39 (TO-205AD) Package 2N5339
ELECTRICAL CHARACTERISTICS
PARAMETER OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage Collector – Emitter Cutoff Current Collector – Base Cutoff Current Emitter – Base Cutoff Current ON CHARACTERISTIC1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Emitter - Base Saturation Voltage DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small Signal Short-Circuit Forward Current Transfer Ratio Output Capacitance TEST CONDITION IC = 50 mA dc VCE = 100 V dc VCE = 90 V dc, VBE = 1.5 V dc VCB = 100 V dc VEB = 6.0 V dc IC= 0.5 A dc, VCE = 2.0 V IC = 2.0 A dc, VCE = 2.0 V IC= 0.5 A dc, VCE = 2.0 V IC= 2.0 A dc, IB = 0.2 A dc IC= 5.0 A dc, IB = 0.5 A dc IC = 150 A dc, IB= 0.2 A dc IC= 150 A dc, IB =0.5 A dc IC= 0.5 A dc, VCE = 10.0 V dc, f = 10 MHz VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz Input Capacitance SAFE OPERATING AREA DC Tests: TC = + 25 °C, I...
