Microsemi 2N5660
NPN POWER SILICON TRANSISTOR
| Part No. | 2N5660 |
|---|---|
| Datasheet | 2N5660 Download |
| Manufacturer |  Microsemi |
| Description | NPN POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCEO VCBO VCER VEBO IB IC @ TA = +250C @ TC = +1000C Operating & Storage Junction Temperature Range Total Power Dissipation PT TJ, Tstg 2N5660 2N5661 5.0 87.5 2N5660 2N5661 2N5662 2N5663 200 300 250 400 250 400 6.0 0.5 2.0 2N5660 2N5662 2N5661 2N5663 2.0(1) 1.0(2) (3) 20 15(4) -65 to +200 2N5662 2N5663 6.67 145.8 Unit Vdc Vdc Vdc Vdc Adc Adc TO-66* (TO-213AA) 2N5660, 2N5661 W W 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Junction-to-Ambient 1) 2) 3) Symbol RθJC Unit 0 C/W 4) RθJA Derate linearly 11.4 mW/0C for TA >+ 250C Derate linearly 5.7 mW/0C for TA > +250C Derate linearly 200 mW/0C for TC > +1000C Derate linearly 150 mW/0C for TC > +1000C TO-5* 2N5662, 2N5663 *See appendix A for package outlineELECTRICAL CHARACTERISTICS
(TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. U...
