Microsemi 2N5796U
PNP DUAL SILICON TRANSISTOR
| Part No. | 2N5796U |
|---|---|
| Datasheet | 2N5796U Download |
| Manufacturer |  Microsemi |
| Description | PNP DUAL SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC @ TA = +250C Value 60 60 5.0 600 Units Vdc Vdc Vdc mAdc TO-78* One Total Power Dissipation PT TJ, Tstg (1) Section 0.5 Both Sections 0.6 (2) W 0 Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/0C for TA ≥ +250C 2) Derate linearly 3.43 mW/0C for TA ≥ +250C -65 to +175 C 6 PIN SURFACE MOUNT* *See MILPRF19500/496 for package outlineELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICBO Min. 60 Max. Unit Vdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Cutoff Current VCB = 50 Vdc VCBO = 60 Vdc Emitter-Base Cutoff Current VEB = 3.0 Vdc VEB = 5.0 Vdc 10 10 100 10 ηAdc µAdc ηAdc µAdc IEBO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 42203 Page 1 of 2 2N5795, 2N5796 JAN SERIESELECTRICAL CHARACTERISTICS
(con’t) Characteristics Symbol Min.