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2N5796U - PNP Dual Silicon Transistors

This page provides the datasheet information for the 2N5796U, a member of the 2N5795 PNP Dual Silicon Transistors family.

Datasheet Summary

Features

  • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500/496.
  • TO-78 and U package types.
  • Radiation Tolerant Levels M, D, P, L, and R Rev. V3 Electrical Characteristics (+25oC unless otherwise specified) Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Base.

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Datasheet Details

Part number 2N5796U
Manufacturer VPT
File Size 481.44 KB
Description PNP Dual Silicon Transistors
Datasheet download datasheet 2N5796U Datasheet
Additional preview pages of the 2N5796U datasheet.

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Other Datasheets by VPT
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  • 2N5796A - PNP Dual Silicon Transistors
  • 2N5796AU - PNP Dual Silicon Transistors
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  • 2N5794A - NPN Dual Silicon Transistor
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Full PDF Text Transcription

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2N5795, 2N5795A, 2N5796 2N5796A, 2N5796AU, 2N5796U PNP Dual Silicon Transistors Features • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500/496 • TO-78 and U package types • Radiation Tolerant Levels M, D, P, L, and R Rev. V3 Electrical Characteristics (+25oC unless otherwise specified) Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Base - Emitter Saturation Voltage Forward-Current Transfer Ratio (Gain Ratio) (2N5795A, 2N5796A) Test Conditions IC = 10 mA dc VCB = 60 V dc VCB = 50 V dc VEB = 5.0 V dc VEB = 3.0 V dc 2N5795, 2N5795A VCE = 10 V dc; IC = 0.
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