2N5795 - PNP Dual Silicon Transistors

VPT

Key Features

Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500/496.
TO-78 and U package types.
Radiation Tolerant Levels M, D, P, L, and R Rev. V3 Electrical Characteristics (+25oC unless otherwise specified) Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Base.

2N5795 pnp dual silicon transistors by VPT - Datasheet Preview

Datasheet Details

Part number	2N5795
Manufacturer	VPT
File Size	481.44 KB
Description	PNP Dual Silicon Transistors
Datasheet	2N5795 Datasheet

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Other Datasheets by VPT

Part Number	Description
2N5795A	PNP Dual Silicon Transistors
2N5793	NPN Dual Silicon Transistor
2N5793A	NPN Dual Silicon Transistor
2N5794	NPN Dual Silicon Transistor
2N5794A	NPN Dual Silicon Transistor

Full PDF Text Transcription (Reference)

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2N5795, 2N5795A, 2N5796 2N5796A, 2N5796AU, 2N5796U PNP Dual Silicon Transistors Features • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500/496 • TO-78 and U package types • Radiation Tolerant Levels M, D, P, L, and R Rev. V3 Electrical Characteristics (+25oC unless otherwise specified) Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Base - Emitter Saturation Voltage Forward-Current Transfer Ratio (Gain Ratio) (2N5795A, 2N5796A) Test Conditions IC = 10 mA dc VCB = 60 V dc VCB = 50 V dc VEB = 5.0 V dc VEB = 3.0 V dc 2N5795, 2N5795A VCE = 10 V dc; IC = 0.