2N5795 Datasheet

The 2N5795 is a PNP DUAL SILICON TRANSISTOR.

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Part Number2N5795
ManufacturerMicrosemi
Overview TECHNICAL DATA PNP DUAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/496 Devices 2N5795 2N5796 2N5796U Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-. Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 42203 Page 1 of 2 2N5795, 2N5796 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (1) Forward-Current Transfer Ratio IC = 100 µAdc, VCE = 10 Vdc IC = 1.0 mA.
Part Number2N5795
DescriptionDUAL TRANSISTOR
ManufacturerMotorola Semiconductor
Overview 2N5795 2N5796 JAN, JTX, JTXV AVAILABLE CASE 654-07, STYLE 1 DUAL TRANSISTOR PNP SILICON Refer to MD2904,A for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-B. .
Part Number2N5795
DescriptionPNP Dual Silicon Transistors
ManufacturerVPT Components
Overview 2N5795, 2N5795A, 2N5796 2N5796A, 2N5796AU, 2N5796U PNP Dual Silicon Transistors Features • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500/496 • TO-78 and U package types • Radiation .
* Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500/496
* TO-78 and U package types
* Radiation Tolerant Levels M, D, P, L, and R Rev. V3 Electrical Characteristics (+25oC unless otherwise specified) Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Ba.