The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2N5795, 2N5795A, 2N5796 2N5796A, 2N5796AU, 2N5796U
PNP Dual Silicon Transistors
Features
• Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500/496
• TO-78 and U package types • Radiation Tolerant Levels M, D, P, L, and R
Rev. V3
Electrical Characteristics (+25oC unless otherwise specified)
Parameter Off Characteristics
Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current
On Characteristics1
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Base - Emitter Saturation Voltage Forward-Current Transfer Ratio (Gain Ratio) (2N5795A, 2N5796A)
Test Conditions
IC = 10 mA dc VCB = 60 V dc VCB = 50 V dc VEB = 5.0 V dc VEB = 3.0 V dc
2N5795, 2N5795A VCE = 10 V dc; IC = 0.