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TECHNICAL DATA
PNP DUAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/496 Devices
2N5795 2N5796 2N5796U
Qualified Level
JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Symbol
VCEO VCBO VEBO IC @ TA = +250C
Value
60 60 5.0 600
Units
Vdc Vdc Vdc mAdc
TO-78*
One
Total Power Dissipation PT TJ, Tstg
(1)
Section 0.5
Both Sections 0.6
(2)
W
0
Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/0C for TA ≥ +250C 2) Derate linearly 3.43 mW/0C for TA ≥ +250C
-65 to +175
C
6 PIN SURFACE MOUNT*
*See MILPRF19500/496 for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol V(BR)CEO ICBO Min. 60
Max.
2N5796U Datasheet
