2N5796 - PNP DUAL SILICON TRANSISTOR

Microsemi Corporation

Datasheet Details

Part number	2N5796
Manufacturer	Microsemi Corporation
File Size	127.42 KB
Description	PNP DUAL SILICON TRANSISTOR
Datasheet	2N5796 Datasheet
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TECHNICAL DATA PNP DUAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/496 Devices 2N5795 2N5796 2N5796U Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC @ TA = +250C Value 60 60 5.0 600 Units Vdc Vdc Vdc mAdc TO-78* One Total Power Dissipation PT TJ, Tstg (1) Section 0.5 Both Sections 0.6 (2) W 0 Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/0C for TA ≥ +250C 2) Derate linearly 3.43 mW/0C for TA ≥ +250C -65 to +175 C 6 PIN SURFACE MOUNT* *See MILPRF19500/496 for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICBO Min. 60 Max.

Published: Mar 22, 2005 |