Microsemi 2N6338
NPN POWER SILICON TRANSISTOR
| Part No. | 2N6338 |
|---|---|
| Datasheet | 2N6338 Download |
| Manufacturer |  Microsemi |
| Description | NPN POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation (1) Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol 2N6338 100 120 2N6341 150 180 Unit Vdc Vdc Vdc Adc Adc W W 0 @ TA = +250C @ TC = +1000C Operating & Storage Junction Temperature Range 6.0 10 25 200 112 -65 to +175 Max. 0.875 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case RθJC 0 0 Derate linearly 1.14 W/ C for TC = +25 C and TC = +2000C 0 TO-3* (TO-204AA) Unit C/W *See appendix A for package outline 1)ELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 50 mAdc Collector-Emitter Cutoff Current VCE = 50 Vdc VCE = 75 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc, VBE = 1.5 Vdc VCE = 150 Vdc, VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc Collector-Base Cutoff Current VCB = 120 Vdc VCB =...