Microsemi 2N6351
NPN DARLINGTON POWER SILICON TRANSISTOR
| Part No. | 2N6351 |
|---|---|
| Datasheet | 2N6351 Download |
| Manufacturer |  Microsemi |
| Description | NPN DARLINGTON POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCER VCBO VEBO IB IC 2N6350 2N6352 80 80 2N6351 2N6353 150 150 Units Vdc Vdc Vdc Vdc Adc Adc Adc 12 6.0 0.5 5.0 10(1) 2N6350 2N6351 Total Power Dissipation @ TA = 250C @ TC = 1000C Operating & Storage Junction Temperature Range PT TJ, Tstg Symbol RθJC 2N6352 2N6353 W W 0 C 2N6350, 2N6351 TO-33* 1.0(2) 2.0(4) (3) 5.0 25(5) -65 to +200 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Applies for tp ≤ 10 ms, Duty cycle ≤ 50% 2) Derate linearly @ 5.72 mW/0C above TA > 250C 3) Derate linearly @ 50 mW/0C above TC > 1000C 4) Derate linearly @ 11.4 mW/0C above TA > 250C 5) Derate linearly @ 250 mW/0C above TC > 1000C 2N6350 2N6351 20 2N6352 2N6353 4.0 Unit 0 C/W 2N6352, 2N6353 TO-24* (TO-213AA) *See Appendix A for package outlineELECTRICAL CHARACTERISTICS
(TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF C...