Datasheet Summary
2N6351, 2N6353
NPN Darlington Power Silicon Transistors
Features
- Available in JAN, JANTX, JANTXV per MIL-PRF-19500/472
- TO-33 (2N6351) and 3 Pin TO-66 (2N6353) Packages
- Designed for Use in High Gain Amplifier and Switching
Applications
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min.
Rev. V2 Max.
Collector
- Emitter Breakdown Voltage
IC = 25 mA dc; RB1E = 2.2 kΩ; RB2E = 100 Ω 2N6351, 2N6353
V(BR)CER V dc
- Emitter to Base 1 Breakdown Voltage Emitter to Base 2 Breakdown Voltage
Collector
- Emitter Cutoff Current
Saturation Voltage and Resistance Base
- Emitter Voltage (nonsaturated)
Forward-Current Transfer...
