2N6353 - NPN Darlington Power Silicon Transistor

VPT

Download the 2N6353 datasheet PDF. This datasheet also covers the 2N6351 variant, as both devices belong to the same npn darlington power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

Available in JAN, JANTX, JANTXV per MIL-PRF-19500/472.
TO-33 (2N6351) and 3 Pin TO-66 (2N6353) Packages.
Designed for Use in High Gain Amplifier and Switching.

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2N6353 npn darlington power silicon transistor by VPT - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2N6351-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2N6353
Manufacturer	VPT
File Size	762.94 KB
Description	NPN Darlington Power Silicon Transistor
Datasheet	2N6353 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2N6353	NPN DARLINGTON POWER SILICON TRANSISTOR	Microsemi Corporation
2N6353	Power NPN Darlingtons	UNITRODE
2N6350	NPN DARLINGTON POWER SILICON TRANSISTOR	Microsemi Corporation
2N6350	Power NPN Transistor	UNITRODE
2N6351	NPN DARLINGTON POWER SILICON TRANSISTOR	Microsemi Corporation

Other Datasheets by VPT

Part Number	Description
2N6351	NPN Darlington Power Silicon Transistor
2N6300	NPN Darlington Power Silicon Transistor
2N6301	NPN Darlington Power Silicon Transistor
2N6338	NPN High Power Silicon Transistor
2N6341	NPN High Power Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2N6351, 2N6353 NPN Darlington Power Silicon Transistors Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/472 • TO-33 (2N6351) and 3 Pin TO-66 (2N6353) Packages • Designed for Use in High Gain Amplifier and Switching Applications Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Rev. V2 Max. Collector - Emitter Breakdown Voltage IC = 25 mA dc; RB1E = 2.