ABSOLUTE MAXIMUM RATINGS
(TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltage VDS 500 Vdc Gate – Source Voltage Continuous Drain Current Continuous Drain Current Max. Power Dissipation TC = +25°C TC = +100°C TC = +25°C Drain to Source On State Resistance VGS ± 20 Vdc ID1 12 Adc ID2 Ptl Rds(on) 7.75 150 (1) 0.4 (2) Adc W Ω Operating & Storage Temperature Top, Tstg -55 to +150 °C Note: (1) Derated Linearly by 1.2 W/°C for TC > +25°C (2) VGS = 10Vdc, ID = 7.75A ELECTRICAL CHARACTERISTICS
(TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 0.25mA VDS ≥ VGS, ID = 0.25mA, Tj = +125°C VDS ≥ VGS, ID = 0.25mA, Tj = -55°C Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C Drain Current VGS = 0V, VDS = 400V VGS = 0V, VDS = 500V, Tj = +125°C VGS = 0V, VDS = 400V, Tj = +125°C Static Drain-Source On-State Resistance VGS = 10V, ID2 = 7.75A pulsed VGS = 10V, ID1 = 12A pulsed Tj = +125°C VGS = 10V, ID2 = 7.75A pulsed Symbol Min.
Microsemi
