2N6770T1
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://.microsemi.
Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DEVICES
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/543
2N6770 2N6770T1
LEVELS
JAN JANTX JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Drain
- Source Voltage
Vdc
Gate
- Source Voltage
Continuous Drain Current Continuous Drain Current Max. Power Dissipation
TC = +25°C TC = +100°C TC = +25°C
Drain to Source On State Resistance
± 20
Vdc
ID1
Adc
ID2 Ptl Rds(on)
7.75 150 (1) 0.4 (2)
Adc W Ω
Operating & Storage Temperature
Top, Tstg -55 to +150
°C
Note: (1) Derated Linearly by 1.2 W/°C for TC > +25°C (2) VGS = 10Vdc, ID = 7.75A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions OFF CHARACTERTICS
Drain...
