Microsemi 2N6901
N-CHANNEL LOGIC LEVEL MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltage VDS 100 Vdc Gate – Source Voltage Continuous Drain Current Continuous Drain Current Max. Power Dissipation TC = +25°C TC = +100°C Drain to Source On State Resistance VGS ± 10 Vdc ID1 1.69 Adc ID2 Ptl Rds(on) 1.07 8.33 (1) 1.4 (2) Adc W Ω Operating & Storage Temperature Top, Tstg -55 to +150 °C Note: (1) Derated Linearly by 0.067 W/°C for TC > +25°C (2) VGS = 5Vdc, ID = 1.07AELECTRICAL CHARACTERISTICS
(TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. OFF CHARACTERTICS Drain-Source Breakdown Voltage VGS = 0V, ID = -1mAdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 1.0mA VDS ≥ VGS, ID = 1.0mA, Tj = +125°C VDS ≥ VGS, ID = 1.0mA, Tj = -55°C Gate Current VGS = ±10V, VDS = 0V VGS = ±10V, VDS = 0V, Tj = +125°C Drain Current VGS = 0V, VDS = 80V VGS = 0V, VDS = 80V, Tj = +125°C Static Drain-Source On-State Resistance VGS = 5V, ID = 1.07A pulsed V(BR)DSS 100 VGS(th)1 1.0 VGS(th)2 0.5 VGS(th)3 IGSS1 IGSS2 IDSS1 IDSS2 rDS(on)1 Max.