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Technical Data TRANSISTOR
maximum ratings
VDS VDG VGS ID IDM IG Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ)
100.0 V
100.0 V
± 10.0 V
1.69 A
5.0 A
empty
A
8.33 W
15.0 °C/W
150.0 °C
NO. TYPE empty empty CASE empty empty
2N6901 V-MOS LOGIC LEVEL N-CHANNEL TO-39 empty empty
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
C
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. BVDSS
ID = 1 mA
100.0
-
V
2. VGS(TH)
ID = 1 mA
1.0 2.0
V
3. IDSS
VDS = 80 V
- 1.0 µA
4. IDSS
VDS = 80 V , TC = 125 °C
- 50.0 µA
5. IGSS
VGS = 10 V
-
100.0
nA
6. VDS(ON)
ID = 1.07 A , VGS = 5 V
(1) - 1.5 V
7. VDS(ON)
ID = 1.69 A , VGS = 5 V
(1) - 2.4 V
8. RDS(ON)
ID = 1.07 A , VGS = 5 V
(1) -
1.4 Ω
9.