Microsemi 2N720A
NPN LOW POWER SILICON TRANSISTOR
| Part No. | 2N720A |
|---|---|
| Datasheet | 2N720A Download |
| Manufacturer |  Microsemi |
| Description | NPN LOW POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Symbol All Devices Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage (RBE = 10 Ω) Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) VCEO VCBO VEBO VCER IC PT 80 120 7.0 100 500 2N720A 2N1893, S 0.5 0.8 1.8 3.0 Operating & Storage Junction Temperature Range TJ, Tsrg -65 to +200 THERMAL CHARACTERISTICS Characteristics Symbol 2N720A 2N1893, S Thermal Resistance, Junction-to-Case RθJC 97 58 1) Derate linearly 2.86 mW/0C for 2N720A, 4.57 mW/0C for 2N1893, S TA > 250C 2) Derate linearly 10.3 mW/0C for 2N720A, 17.2 mW/0C for 2N1893, S TC > 250CELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 30 mAdc V(BR)CEO Collector-Emitter B