STMicroelectronics 2N720A
The 2N720A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is suitable for a wide variety of amplifier and switching applications.| Part No. | 2N720A |
|---|---|
| Datasheet | 2N720A Download |
| Manufacturer |  STMicroelectronics |
| Description | Silicon Planar Epitaxial NPN transistor |
| Buy | Stock & Price |
DESCRIPTION
TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTEMAXIMUM RATINGS Symbol V CBO V CEO V EBO IC Pt o t T st g, T j October 1988 Parameter Collector-base Voltage (I E = 0) Collector–emitter Voltage (I R = 0) Emitter–base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T cas e ≤ 25 °C Storage and Junction Temperature Value 120 80 7 500 0.5 1.8 – 65 to 200 Unit V V V mA W W °C 1/4 2N720A THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 97.2 350 °C/W °C/WELECTRICAL CHARACTERISTICS
(T a mb = 25 °C unless otherwise specified) Symbol I CBO V (B R)CBO Parameter Collector Cutoff Current (I E = 0) Collector–base Breakdown Voltage (I E = 0) Collector–emitter Breakdown Voltage (I B = 0) Emitter–base Breakdown Voltage (I E = 0) Emitter Cuttoff Current (I E = 0) Collector–emitter Saturation Voltage Base–emitter Saturation Voltage DC Current Gain Test Conditions V CB = 90 V I C = 100 µA 120 Min. Typ. Max.
