Datasheet Summary
TECHNICAL DATA
NPN DARLINGTON HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/624
Devices 2N7370
Qualified Level
JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS Characteristics
Thermal Resistance, Junction-to-Case 1) Derate linearly 0.667 W/0C above TC > +250C
Symbol VCEO VCBO VEBO IB IC PT
TJ, Tstg
Value 100 100 5.0 0.2 12 100
-65 to +175
Units Vdc Vdc Vdc Adc Adc W 0C
Symbol RθJC
Max. 1.5
Unit 0C/W
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise...