2N7370 datasheet PDF by Microsemi (now Microchip Technology).
| Part number | 2N7370 |
|---|---|
| Datasheet | 2N7370-Microsemi.pdf |
| File Size | 50.49 KB |
| Manufacturer | Microsemi (now Microchip Technology) |
| Description | NPN DARLINGTON HIGH POWER SILICON TRANSISTOR |
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1.5 Unit 0C/W (TC = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCEO(sus) VCE = 50 Vdc Collector-Emitter Cutoff Current ICEO VCE = 100 Vdc, VBE = 1.5 Vdc Emitter-Base Cutoff Current ICEX VEB = 5.0 Vdc IEBO TO-254 See Appendix.
View all Microsemi (now Microchip Technology) datasheets
| Part Number | Description |
|---|---|
| 2N720A | NPN LOW POWER SILICON TRANSISTOR |
