Microsemi 2N7370
NPN DARLINGTON HIGH POWER SILICON TRANSISTOR
| Part No. | 2N7370 |
|---|---|
| Datasheet | 2N7370 Download |
| Manufacturer |  Microsemi |
| Description | NPN DARLINGTON HIGH POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 0.667 W/0C above TC > +250C Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg Value 100 100 5.0 0.2 12 100 -65 to +175 Units Vdc Vdc Vdc Adc Adc W 0C Symbol RθJC Max. 1.5 Unit 0C/WELECTRICAL CHARACTERISTICS
(TC = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCEO(sus) VCE = 50 Vdc Collector-Emitter Cutoff Current ICEO VCE = 100 Vdc, VBE = 1.5 Vdc Emitter-Base Cutoff Current ICEX VEB = 5.0 Vdc IEBO TO-254* *See Appendix A