2N7370 - NPN DARLINGTON HIGH POWER SILICON TRANSISTOR

Microsemi (now Microchip Technology)

Datasheet Details

Part number	2N7370
Manufacturer	Microsemi (now Microchip Technology)
File Size	50.49 KB
Description	NPN DARLINGTON HIGH POWER SILICON TRANSISTOR
Datasheet	2N7370 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2N7371	PNP DARLINGTON HIGH POWER SILICON TRANSISTOR	Microsemi Corporation
2N7372	Complimentary Power Transistors	Microsemi Corporation
2N7373	Complimentary Power Transistors	Microsemi Corporation
2N7375	NPN POWER TRANSISTOR	SSDI
2N7377	NPN Transistor	SSDI

Other Datasheets by Microsemi (now Microchip Technology)

Part Number	Description
2N720A	NPN LOW POWER SILICON TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

TECHNICAL DATA NPN DARLINGTON HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/624 Devices 2N7370 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 0.667 W/0C above TC > +250C Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg Value 100 100 5.0 0.2 12 100 -65 to +175 Units Vdc Vdc Vdc Adc Adc W 0C Symbol RθJC Max. 1.