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APT20M45BVR - Power MOSFET

Key Features

  • Faster switching.
  • Lower Leakage.
  • 100% Avalanche tested.
  • Popular TO-247 Package.
  • RoHS compliant D G S Absolute Maximum Ratings Symbol Parameter All Ratings: TC = 25°C unless otherwise specified. Ratings Unit VDSS ID IDM VGS VGSM PD Drain Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor 200 Volts 56 Am.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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APT20M45BVR(G) 200V, 56A, 0.045Ω POWER MOS V® POWER MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. APT20M45BVR(G) TO-247 D3 FEATURES • Faster switching • Lower Leakage • 100% Avalanche tested • Popular TO-247 Package • RoHS compliant D G S Absolute Maximum Ratings Symbol Parameter All Ratings: TC = 25°C unless otherwise specified.