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APT20M45BVRG - Power MOSFET

Download the APT20M45BVRG datasheet PDF. This datasheet also covers the APT20M45BVR variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Faster switching.
  • Lower Leakage.
  • 100% Avalanche tested.
  • Popular TO-247 Package.
  • RoHS compliant D G S Absolute Maximum Ratings Symbol Parameter All Ratings: TC = 25°C unless otherwise specified. Ratings Unit VDSS ID IDM VGS VGSM PD Drain Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor 200 Volts 56 Am.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (APT20M45BVR-Microsemi.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
APT20M45BVR(G) 200V, 56A, 0.045Ω POWER MOS V® POWER MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. APT20M45BVR(G) TO-247 D3 FEATURES • Faster switching • Lower Leakage • 100% Avalanche tested • Popular TO-247 Package • RoHS compliant D G S Absolute Maximum Ratings Symbol Parameter All Ratings: TC = 25°C unless otherwise specified.