Datasheet4U Logo Datasheet4U.com

APT21M100J - N-Channel MOSFET

Key Features

  • Fast switching with low EMI/RFI.
  • Low RDS(on).
  • Ultra low Crss for improved noise immunity.
  • Low gate charge.
  • Avalanche energy rated.
  • RoHS compliant.

📥 Download Datasheet

Full PDF Text Transcription for APT21M100J (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for APT21M100J. For precise diagrams, and layout, please refer to the original PDF.

APT21M100J 1000V, 21A, 0.40Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields...

View more extracted text
el switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. S G D S SO 2 T- 27 ISOTOP ® "UL Recognized" file # E145592 APT21M100J G D Single die MOSFE

More Datasheets from Microsemi (now Microchip Technology)

Part Number Description
APT20DC120HJ SiC Diode Full Bridge Power Module
APT20DC60HJ SiC Diode Full Bridge Power Module
APT20F50B N-Channel MOSFET
APT20F50S N-Channel MOSFET
APT20M18B2VFR Power MOSFET
APT20M18B2VR Power MOSFET
APT20M45BVR Power MOSFET
APT20M45BVRG Power MOSFET
APT20SCD120B Zero Recovery Silicon Carbide Schottky Diode
APT20SCD120S Zero Recovery Silicon Carbide Schottky Diode