APT47N65BC3
APT47N65BC3 is MOSFET manufactured by Microsemi.
APT47N65BC3 APT47N65SC3
650V 47A 0.070Ω
COOL MOS
Po we r Se miconduc tors
Super Junction MOSFET
- Ultra low RDS(ON)
- Increased Power Dissipation
- Low Miller Capacitance
- Ultra Low Gate Charge, Qg
- Avalanche Energy Rated
- TO-247 or Surface Mount D3PAK Package
TO-247
D3PAK
MAXIMUM RATINGS Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT47N65B_SC3
UNIT
VDSS ID IDM VGS
VGSM
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
650 47 141 ±20 ±30 417 3.33
Volts Amps
Volts Watts W/°C
TJ,TSTG TL dv/dt IAR EAR EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 47A, TJ = 125°C) Repetitive Avalanche Current 7 ++++Repetitive Avalanche Energy 7 Single Pulse Avalanche Energy 4 Single Pulse Avalanche Energy 4
-55 to 150 260 50 20 1 1800
°C V/ns Amps m J
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS RDS(on)
IDSS
IGSS VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID =...
