APT47N65BC3 Datasheet
APT47N65BC3 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Sourc.
*Drain Current
*ID=47A@ TC=25℃
*Drain Source Voltage-
: VDSS=650V(Min)
*Static Drain-Source On-Resistance
: RDS(on) =0.07Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
*Designed for use in switch mode power supplies and .
APT47N65BC3 Datasheet (Microsemi)
Microsemi
APT47N65BC3 APT47N65SC3 650V 47A 0.070Ω COOL MOS Po we r Se miconduc tors Super Junction MOSFET • Ultra low RDS(ON) • Increased Power Dissipation • Low Miller Capacitance • U.
Single Pulse Avalanche Energy 4 -55 to 150 260 50 20 1 1800 °C V/ns Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BVDSS RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 650 Drain-Source On-State Resi.