Datasheet Details
| Part number | APT50GS60BRDQ2 |
|---|---|
| Manufacturer | Microsemi (now Microchip Technology) |
| File Size | 327.87 KB |
| Description | High Speed NPT IGBT |
| Datasheet |
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| Part number | APT50GS60BRDQ2 |
|---|---|
| Manufacturer | Microsemi (now Microchip Technology) |
| File Size | 327.87 KB |
| Description | High Speed NPT IGBT |
| Datasheet |
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APT50GS60BRDQ2(G) APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt® High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS™ series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff.
The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost.
An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient make it easy to parallel Thunderbolts HS™ IGBT's.
| Part Number | Description |
|---|---|
| APT50GS60BRDQ2G | High Speed NPT IGBT |
| APT50GS60SRDQ2 | High Speed NPT IGBT |
| APT50GS60SRDQ2G | High Speed NPT IGBT |
| APT50GN60B | Resonant Mode Combi IGBT |
| APT50GN60BDQ2 | Resonant Mode Combi IGBT |
| APT50GN60BDQ2G | Resonant Mode Combi IGBT |
| APT50GN60BG | Resonant Mode Combi IGBT |
| APT50GN60S | Resonant Mode Combi IGBT |
| APT50GN60SDQ2 | Resonant Mode Combi IGBT |
| APT50GN60SDQ2G | Resonant Mode Combi IGBT |