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APT50GS60SRDQ2 Datasheet High Speed NPT IGBT

Manufacturer: Microsemi (now Microchip Technology)

Download the APT50GS60SRDQ2 datasheet PDF. This datasheet also includes the APT50GS60BRDQ2 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (APT50GS60BRDQ2-Microsemi.pdf) that lists specifications for multiple related part numbers.

Overview

APT50GS60BRDQ2(G) APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt® High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS™ series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff.

The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost.

An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient make it easy to parallel Thunderbolts HS™ IGBT's.

Key Features

  • Typical.

More Datasheets from Microsemi (now Microchip Technology)

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