APT68GA60B Datasheet | Microsemi

APT68GA60B APT68GA60S 600V High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency pared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the TO-247 APT68GA60S D3PAK poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even APT68GA60B when switching at high frequency. Single die IGBT Features - Fast switching with low EMI - Very Low Eoff for maximum efficiency - Ultra low Cres for improved noise immunity - Low conduction loss - Low gate charge - Increased intrinsic gate resistance for low EMI - Ro HS pliant TYPICAL APPLICATIONS - ZVS phase shifted and other full bridge - Half bridge - High power PFC boost - Welding - UPS, solar, and other inverters - High frequency, high efficiency...