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APT68GA60B APT68GA60S
600V
High Speed PT IGBT
POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
TO-247
APT68GA60S
D3PAK
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even APT68GA60B
when switching at high frequency.
APT68GA60B Datasheet
