APT84M50B2
APT84M50B2 is N-Channel MOSFET manufactured by Microsemi.
FEATURES
- Fast switching with low EMI/RFI
- Low RDS(on)
- Ultra low Crss for improved noise immunity
- Low gate charge
- Avalanche energy rated
- Ro HS pliant
TYPICAL APPLICATIONS
- PFC and other boost converter
- Buck converter
- Two switch forward (asymmetrical bridge)
- Single switch forward
- Flyback
- Inverters
Absolute Maximum Ratings
Symbol Parameter
Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD RθJC
Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance
RθCS TJ,TSTG
Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range
TL Soldering Temperature for 10 Seconds (1.6mm from case)
WT Package Weight
Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw
Ratings 84 53 270 ±30
1845 42
Unit
V m J A
Min Typ Max Unit 1135 W 0.11 °C/W
0.11 -55 150
°C 300 0.22 oz 6.2 g 10 in- lbf 1.1 N- m
Microsemi...