APT84M50B2 Datasheet and Specifications PDF

·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Sourc.

*Drain Current
*ID= 84A@ TC=25℃
*Drain Source Voltage- : VDSS=500V(Min)
*Static Drain-Source On-Resistance : RDS(on) =0.065Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies an.

APT84M50B2 APT84M50L 500V, 84A, 0.065Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliabi.

* Fast switching with low EMI/RFI
* Low RDS(on)
* Ultra low Crss for improved noise immunity
* Low gate charge
* Avalanche energy rated
* RoHS compliant TYPICAL APPLICATIONS
* PFC and other boost converter
* Buck converter
* Two switch forward (asymmetrical bridge)
* Single switch forward
* Flyback.