APTC60DAM35T1G Datasheet | Microsemi

Features - - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Very low stray inductance Internal thermistor for temperature monitoring High level of integration CR1 3 4 Q2 9 10 1 2 - - - Benefits - Outstanding performance at high frequency operation - Direct mounting to heatsink (isolated package) - Low junction to case thermal resistance - Solderable terminals both for power and signal for easy PCB mounting - Low profile - Ro HS pliant Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 600 72 54 200 ±20 35 416 20 1 1800 Unit V A V mΩ W A m J August, 2007 1- 6 APTC60DAM35T1G - Rev 0 Tc = 25°C .. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on .microsemi. .microsemi. All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Tj = 25°C Tj = 125°C 2.1 Typ VGS = 10V, ID = 72A VGS = VDS, ID = 5.4m A VGS = ±20 V, VDS = 0V Max 40 375 35 3.9...