APTC60DDAM24T3G
APTC60DDAM24T3G is Dual Boost chopper Super Junction MOSFET Power Module manufactured by Microsemi.
Features
- CR1 22 23 Q1 26 7 8
CR2
Q2 4
27 29 15 30 31 R1 32 16
- -
- -
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged Kelvin source for easy drive Very low stray inductance
- Symmetrical design Internal thermistor for temperature monitoring High level of integration
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 …
Benefits
- Outstanding performance at high frequency operation
- Direct mounting to heatsink (isolated package)
- Low junction to case thermal resistance
- Solderable terminals both for power and signal for easy PCB mounting
- Low profile
- Each leg can be easily paralleled to achieve a single Boost of twice the current capability
- Ro HS pliant
Absolute maximum ratings
Symbol VDSS ID Parameter Drain
- Source Breakdown Voltage Continuous Drain Current Tc = 25°C Tc = 80°C Max ratings 600 95 70 260 ±20 24 462 15 3 1900 Unit V
August, 2009 1- 7 APTC60DDAM24T3G
- Rev 0
A V mΩ W A m J
IDM Pulsed Drain current VGS Gate
- Source Voltage RDSon Drain
- Source ON Resistance .. PD Maximum Power Dissipation IAR Avalanche current (repetitive and non repetitive) EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy
Tc = 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on .microsemi.
.microsemi....
