APTC60DSKM45CT1G Datasheet | Microsemi

Features - - Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged Si C Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration - - - Pins 3/4 must be shorted together Benefits - Outstanding performance at high frequency operation - Direct mounting to heatsink (isolated package) - Low junction to case thermal resistance - Solderable terminals both for power and signal for easy PCB mounting - Low profile - Ro HS pliant Absolute maximum ratings Symbol VDSS ID Parameter Drain - Source Breakdown Voltage Continuous Drain Current Tc = 25°C Tc = 80°C Max ratings 600 49 38 130 ±20 45 250 15 3 1900 Unit V A V mΩ W A m J september, 2009 1- 7 APTC60DSKM45CT1G - Rev 0 IDM Pulsed Drain current VGS Gate - Source Voltage RDSon Drain - Source ON Resistance .. PD Maximum Power Dissipation IAR Avalanche current (repetitive and non repetitive) EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on .microsemi. .microsemi. All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Tj = 25°C Tj = 125°C 2.1 Typ VGS = 10V, ID = 24.5A VGS = VDS, ID = 3m A VGS = ±20 V, VDS = 0V 40 3 Max 250 500 45 3.9 100 Unit µA mΩ V n A Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charge...